Mikulics, M.M.MikulicsMarso, M.M.MarsoJavorka, P.P.JavorkaKordos, P.P.KordosLuth, H.H.LuthKocan, M.M.KocanRizzi, AngelaAngelaRizziWu, S.S.WuSobolewski, R.R.Sobolewski2018-11-072018-11-072005https://resolver.sub.uni-goettingen.de/purl?gro-2/50859We have fabricated and characterized ultrafast metal-semiconductor- metal photodetectors based on low-temperature-grown (LT) GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material. © 2005 American Institute of Physics.journal_article10.1063/1.1938004000229544200010