High-resolution electron microscopy of interfaces between solids with varying degree of atomic ordering

Abstract

High-resolution electron microscopy is used to study interfaces between solids with varying degree of atomic ordering. Applying a recently developed technique the structure of amorphous germanium near (111) oriented crystalline silicon is described by its two-dimensional distribution function rho(x, y) of atoms, and properties of rho(x, y) are extracted from experimental images. Using extensive image simulations it is further shown that the technique is suitable to measure composition profiles at coherent heterointerfaces.