Hydrogen-induced defects in niobium

Abstract

The introduction of new defects due to H-loading of Nb, their population as a function of the H concentration, and the mechanism of their formation are investigated by positron annihilation spectroscopy (PAS). In addition, X-ray diffraction (XRD), and transmission electron microscopy (TEM) are applied. Furthermore, the results obtained by the experimental techniques are compared with theoretical calculations of energetic stability and positron characteristics of various defect-H configurations. It is found that vacancies surrounded by H atoms are introduced into the specimens by H-loading. The density of these vacancy-H complexes increases with increasing concentration of H in the specimens. The H-induced vacancies are formed even in the alpha-phase field, when the metal-H system is a single phase solid solution. The stability of the H-induced defects and the mechanism of their formation are discussed. (C) 2006 Elsevier B.V. All rights reserved.