Depth resolved scanning tunneling spectroscopy of shallow acceptors in gallium arsenide

Abstract

Scanning tunneling spectroscopy (STS) at 8 K is used to study single shallow acceptors embedded near {110}-surfaces ill gallium arsenide (GaAs). At appropriate bias voltages the circularly symmetric contrast normally observed for charged defects evolves into a pronounced triangular shaped protrusion. Comparing dopants at different depths under the surface, we find a linear shift of the associated conductivity maximum along (112) directions. Comparative Studies of Carbon and Zinc acceptors in a modulation-doped heterostructure reveal that both dopants act similarly. The experimental findings Suggest that the highly anisotropic features induced by acceptors resemble a bulk property of the GaAs crystal prominently demonstrating its Ziricblende symmetry.