Publication:
Ripple propagation and velocity dispersion on ion-beam-eroded silicon surfaces

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dc.bibliographiccitation.artnumber115327
dc.bibliographiccitation.issue11
dc.bibliographiccitation.journalPHYSICAL REVIEW B
dc.bibliographiccitation.volume65
dc.contributor.authorHabenicht, S.
dc.contributor.authorLieb, Klaus-Peter
dc.contributor.authorKoch, Jan Christoph
dc.contributor.authorWieck, Andreas D.
dc.date.accessioned2018-11-07T10:31:08Z
dc.date.available2018-11-07T10:31:08Z
dc.date.issued2002
dc.description.abstractThe propagation of surface ripples during Ga ion beam erosion of Si was measured in real time by combining focused ion beam technology with scanning electron microscopy. By detecting the secondary electrons emitted during implantation the surface was monitored in situ during the erosion. The ripple wavelength increases with the erosion time as lambdaproportional tot(0.50(4)). The value of the ripple velocity was observed to agree qualitatively with the results of Monte-Carlo simulations of the erosion process, and was found to decrease with the ripple dimension like nuproportional tolambda(x)(-1.5(1)).
dc.identifier.doi10.1103/PhysRevB.65.115327
dc.identifier.isi000174548400096
dc.identifier.urihttps://resolver.sub.uni-goettingen.de/purl?gro-2/44032
dc.notes.statuszu prüfen
dc.notes.submitterNajko
dc.publisherAmerican Physical Soc
dc.relation.issn1098-0121
dc.titleRipple propagation and velocity dispersion on ion-beam-eroded silicon surfaces
dc.typejournal_article
dc.type.internalPublicationyes
dc.type.peerReviewedyes
dc.type.statuspublished
dspace.entity.typePublication

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