Superhard, conductive coatings for atomic force microscopy cantilevers

Abstract

Boron carbide thin films were grown by mass selected ion beam deposition using low energy B-11(+) and C-12(+) ions at room temperature. The amorphous films exhibit any desired stoichiometry controlled by the ion charge ratio B+/C+. Films with a stoichiometry of B4C showed the optimal combination of a high mechanical strength and a low electrical resistivity for the coating of atomic force microscopy (AFM) silicon cantilevers. The properties of such AFM tips were evaluated and simultaneous topography and Kelvin mode AFM measurements with high lateral resolution were performed on the systems (i) Au nanoparticles on a p-WS2 surface and (ii) conducting/superconducting YBa2Cu3O7-x. (C) 2001 American Institute of Physics.